Growth and Characterization of GaN on Sapphire and Porous SWCNT Using Single Molecular Precursor
نویسندگان
چکیده
منابع مشابه
on the relationship between using discourse markers and the quality of expository and argumentative academic writing of iranian english majors
the aim of the present study was to investigate the frequency and the type of discourse markers used in the argumentative and expository writings of iranian efl learners and the differences between these text features in the two essay genres. the study also aimed at examining the influence of the use of discourse markers on the participants’ writing quality. to this end the discourse markers us...
15 صفحه اولIon-assisted nucleation and growth of GaN on sapphire„0001..
We have performed a real-time x-ray scattering study of the nucleation of GaN on sapphire~0001! by gas-source molecular-beam epitaxy. GaN growth using thermal ammonia and Ga~C2H5!3 exhibited a rapidly decaying intensity at the 0001 reflection, characteristic of three-dimensional cluster growth. Growth with 30-eV NHx 1 ions and Ga~C2H5!3 exhibited layer-by-layer intensity oscillations with maxim...
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ژورنال
عنوان ژورنال: Korean Journal of Materials Research
سال: 2011
ISSN: 1225-0562
DOI: 10.3740/mrsk.2011.21.5.268